STMicroelectronics MDmesh K5, SuperMESH5 Type N-Channel MOSFET, 2 A, 800 V Enhancement, 3-Pin TO-220 STF2N80K5
- RS stock no.:
- 829-4534
- Mfr. Part No.:
- STF2N80K5
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 119,51
(exc. VAT)
R 137,435
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 60 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 23.902 | R 119.51 |
| 25 - 95 | R 23.304 | R 116.52 |
| 100 - 245 | R 22.604 | R 113.02 |
| 250 - 495 | R 21.70 | R 108.50 |
| 500 + | R 20.832 | R 104.16 |
*price indicative
- RS stock no.:
- 829-4534
- Mfr. Part No.:
- STF2N80K5
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | MDmesh K5, SuperMESH5 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 20W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 9.5nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4.6 mm | |
| Height | 16.4mm | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series MDmesh K5, SuperMESH5 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 20W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 9.5nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4.6 mm | ||
Height 16.4mm | ||
Length 10.4mm | ||
Automotive Standard No | ||
N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
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- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220