N-Channel MOSFET, 120 mA, 350 V Depletion, 3-Pin TO-92 Microchip DN2535N3-G
- RS stock no.:
- 829-3332
- Mfr. Part No.:
- DN2535N3-G
- Manufacturer:
- Microchip
Usually in stock
Not Available for premium delivery
Price (Excl VAT) Each (In a Pack of 10)
R 17,143
(exc. VAT)
R 19,714
(inc. VAT)
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 20 | R 17,143 | R 171,43 |
| 30 - 40 | R 16,714 | R 167,14 |
| 50 - 90 | R 16,213 | R 162,13 |
| 100 + | R 15,564 | R 155,64 |
*price indicative
- RS stock no.:
- 829-3332
- Mfr. Part No.:
- DN2535N3-G
- Manufacturer:
- Microchip
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Typical Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms
The Microchip DN2535 N-channel depletion mode (normally-on) transistor utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. It has Drain-to-source and Drain-to-gate voltage of 350V and static drain-to-source on-state resistance of 25Ω.
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Lead (Pb)-free
3-lead TO-92 package
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Lead (Pb)-free
3-lead TO-92 package
MOSFET Transistors, Microchip
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 120 mA |
| Maximum Drain Source Voltage | 350 V |
| Package Type | TO-92 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 25 Ω |
| Channel Mode | Depletion |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Power Dissipation | 1 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Length | 5.2mm |
| Width | 4.19mm |
| Minimum Operating Temperature | -55 °C |
| Height | 5.33mm |
- RS stock no.:
- 829-3332
- Mfr. Part No.:
- DN2535N3-G
- Manufacturer:
- Microchip
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Typical Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms
The Microchip DN2535 N-channel depletion mode (normally-on) transistor utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. It has Drain-to-source and Drain-to-gate voltage of 350V and static drain-to-source on-state resistance of 25Ω.
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Lead (Pb)-free
3-lead TO-92 package
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Lead (Pb)-free
3-lead TO-92 package
MOSFET Transistors, Microchip
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 120 mA |
| Maximum Drain Source Voltage | 350 V |
| Package Type | TO-92 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 25 Ω |
| Channel Mode | Depletion |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Power Dissipation | 1 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Length | 5.2mm |
| Width | 4.19mm |
| Minimum Operating Temperature | -55 °C |
| Height | 5.33mm |