Toshiba TK Type N-Channel MOSFET, 11.5 A, 600 V Enhancement, 3-Pin TO-220 TK12E60W,S1VX(S
- RS stock no.:
- 827-6113
- Mfr. Part No.:
- TK12E60W,S1VX(S
- Manufacturer:
- Toshiba
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 235,32
(exc. VAT)
R 270,62
(inc. VAT)
FREE delivery for orders over R 1,500.00
Being discontinued
- Final 20 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 47.064 | R 235.32 |
| 25 - 45 | R 45.888 | R 229.44 |
| 50 - 120 | R 44.512 | R 222.56 |
| 125 - 245 | R 42.732 | R 213.66 |
| 250 + | R 41.022 | R 205.11 |
*price indicative
- RS stock no.:
- 827-6113
- Mfr. Part No.:
- TK12E60W,S1VX(S
- Manufacturer:
- Toshiba
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11.5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | TK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 300mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Forward Voltage Vf | -1.7V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.45 mm | |
| Height | 15.1mm | |
| Length | 10.16mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11.5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series TK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 300mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Forward Voltage Vf -1.7V | ||
Maximum Operating Temperature 150°C | ||
Width 4.45 mm | ||
Height 15.1mm | ||
Length 10.16mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
MOSFET Transistors, Toshiba
Related links
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