Infineon HEXFET Type N-Channel MOSFET, 9.4 A, 100 V Enhancement, 3-Pin TO-252 IRFR120NTRLPBF

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Subtotal (1 pack of 20 units)*

R 279,70

(exc. VAT)

R 321,66

(inc. VAT)

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Last RS stock
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  • Final 360 unit(s) shipping from 07 January 2026
Units
Per unit
Per Pack*
20 - 80R 13.985R 279.70
100 - 480R 13.635R 272.70
500 - 1480R 13.226R 264.52
1500 - 2980R 12.697R 253.94
3000 +R 12.189R 243.78

*price indicative

Packaging Options:
RS stock no.:
827-4035
Mfr. Part No.:
IRFR120NTRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9.4A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

210mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

48W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

25nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

Lead-Free

Length

6.73mm

Width

6.22 mm

Height

2.39mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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