Infineon HEXFET Type N-Channel MOSFET, 9.4 A, 100 V Enhancement, 3-Pin TO-252 IRFR120NTRLPBF
- RS stock no.:
- 827-4035
- Mfr. Part No.:
- IRFR120NTRLPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 279,70
(exc. VAT)
R 321,66
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- 160 left, ready to ship from another location
- Final 360 unit(s) shipping from 07 January 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 13.985 | R 279.70 |
| 100 - 480 | R 13.635 | R 272.70 |
| 500 - 1480 | R 13.226 | R 264.52 |
| 1500 - 2980 | R 12.697 | R 253.94 |
| 3000 + | R 12.189 | R 243.78 |
*price indicative
- RS stock no.:
- 827-4035
- Mfr. Part No.:
- IRFR120NTRLPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9.4A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 210mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 48W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Lead-Free | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Height | 2.39mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9.4A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 210mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 48W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Lead-Free | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Height 2.39mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 100V, Infineon
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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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