Infineon CoolMOS Type N-Channel MOSFET, 9.4 A, 700 V Enhancement, 3-Pin SOT-223 IPN70R1K2P7SATMA1
- RS stock no.:
- 222-4687
- Mfr. Part No.:
- IPN70R1K2P7SATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 25 units)*
R 350,225
(exc. VAT)
R 402,75
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 5,175 unit(s) shipping from 19 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 14.009 | R 350.23 |
| 50 - 75 | R 13.659 | R 341.48 |
| 100 - 225 | R 13.249 | R 331.23 |
| 250 - 475 | R 12.719 | R 317.98 |
| 500 + | R 12.21 | R 305.25 |
*price indicative
- RS stock no.:
- 222-4687
- Mfr. Part No.:
- IPN70R1K2P7SATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9.4A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.8nC | |
| Maximum Power Dissipation Pd | 6.3W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.7 mm | |
| Height | 1.8mm | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9.4A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.8nC | ||
Maximum Power Dissipation Pd 6.3W | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Width 3.7 mm | ||
Height 1.8mm | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS™ P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.
Product validation acc. JEDEC Standard
Low switching losses (Eoss) Integrated ESD protection diode
Excellent thermal behaviour
Related links
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- Infineon CoolMOS Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223