Infineon HEXFET Type P-Channel MOSFET, 20 A, 30 V Enhancement, 8-Pin SOIC IRF9310TRPBF
- RS stock no.:
- 827-3912
- Mfr. Part No.:
- IRF9310TRPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 204,04
(exc. VAT)
R 234,65
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 3,550 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 20.404 | R 204.04 |
| 100 - 490 | R 19.894 | R 198.94 |
| 500 - 1990 | R 19.297 | R 192.97 |
| 2000 - 3990 | R 18.525 | R 185.25 |
| 4000 + | R 17.784 | R 177.84 |
*price indicative
- RS stock no.:
- 827-3912
- Mfr. Part No.:
- IRF9310TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Distrelec Product Id | 304-44-454 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Width 4 mm | ||
Distrelec Product Id 304-44-454 | ||
Automotive Standard No | ||
P-Channel Power MOSFET 30V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type P-Channel MOSFET 40 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type P-Channel MOSFET 40 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type P-Channel MOSFET -30 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type P-Channel MOSFET -30 V Enhancement, 8-Pin SOIC IRF7606TRPBF