DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 9.3 A, 20 V Enhancement, 7-Pin UDFN DMN2014LHAB-7

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Subtotal (1 pack of 50 units)*

R 292,70

(exc. VAT)

R 336,60

(inc. VAT)

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Units
Per unit
Per Pack*
50 - 200R 5.854R 292.70
250 - 450R 5.708R 285.40
500 - 1200R 5.537R 276.85
1250 - 2450R 5.315R 265.75
2500 +R 5.103R 255.15

*price indicative

Packaging Options:
RS stock no.:
827-0462
Mfr. Part No.:
DMN2014LHAB-7
Manufacturer:
DiodesZetex
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Brand

DiodesZetex

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

9.3A

Maximum Drain Source Voltage Vds

20V

Package Type

UDFN

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

28mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

1.7W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

0.5nC

Minimum Operating Temperature

150°C

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Standards/Approvals

AEC-Q101, UL 94V-0, RoHS, J-STD-020, MIL-STD-202

Length

3.05mm

Height

0.6mm

Width

2.05 mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Dual N-Channel MOSFET, Diodes Inc.


MOSFET Transistors, Diodes Inc.


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