DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 9.3 A, 20 V Enhancement, 7-Pin UDFN DMN2014LHAB-7
- RS stock no.:
- 827-0462
- Mfr. Part No.:
- DMN2014LHAB-7
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 pack of 50 units)*
R 283,95
(exc. VAT)
R 326,55
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,950 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | R 5.679 | R 283.95 |
| 250 - 450 | R 5.537 | R 276.85 |
| 500 - 1200 | R 5.371 | R 268.55 |
| 1250 - 2450 | R 5.156 | R 257.80 |
| 2500 + | R 4.95 | R 247.50 |
*price indicative
- RS stock no.:
- 827-0462
- Mfr. Part No.:
- DMN2014LHAB-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | UDFN | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 28mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 1.7W | |
| Typical Gate Charge Qg @ Vgs | 0.5nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Standards/Approvals | AEC-Q101, UL 94V-0, RoHS, J-STD-020, MIL-STD-202 | |
| Height | 0.6mm | |
| Length | 3.05mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type UDFN | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 28mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 1.7W | ||
Typical Gate Charge Qg @ Vgs 0.5nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Standards/Approvals AEC-Q101, UL 94V-0, RoHS, J-STD-020, MIL-STD-202 | ||
Height 0.6mm | ||
Length 3.05mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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