Texas Instruments FemtoFET Type N-Channel MOSFET, 3.1 A, 30 V Enhancement, 3-Pin PICOSTAR
- RS stock no.:
- 823-9240
- Mfr. Part No.:
- CSD17381F4T
- Manufacturer:
- Texas Instruments
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 294,40
(exc. VAT)
R 338,60
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 240 unit(s) shipping from 23 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | R 14.72 | R 294.40 |
| 40 - 80 | R 14.352 | R 287.04 |
| 100 - 480 | R 13.922 | R 278.44 |
| 500 - 980 | R 13.365 | R 267.30 |
| 1000 + | R 12.83 | R 256.60 |
*price indicative
- RS stock no.:
- 823-9240
- Mfr. Part No.:
- CSD17381F4T
- Manufacturer:
- Texas Instruments
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Texas Instruments | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | FemtoFET | |
| Package Type | PICOSTAR | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.73V | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Typical Gate Charge Qg @ Vgs | 1.04nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.04mm | |
| Height | 0.35mm | |
| Standards/Approvals | No | |
| Width | 0.64 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Texas Instruments | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series FemtoFET | ||
Package Type PICOSTAR | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.73V | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Typical Gate Charge Qg @ Vgs 1.04nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 1.04mm | ||
Height 0.35mm | ||
Standards/Approvals No | ||
Width 0.64 mm | ||
Automotive Standard No | ||
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Related links
- Texas Instruments FemtoFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin PICOSTAR CSD17381F4T
- Texas Instruments FemtoFET N-Channel MOSFET 30 V, 3-Pin PICOSTAR CSD17484F4T
- DiodesZetex Full Bridge 4 Type P 3.1 A 8-Pin
- DiodesZetex Full Bridge 4 Type P 3.1 A 8-Pin ZXMHC3A01T8TA
- Texas Instruments Type N-Channel MOSFET 30 V Enhancement PICOSTAR
- Texas Instruments Type N-Channel MOSFET 12 V Enhancement PICOSTAR
- Texas Instruments Type N-Channel MOSFET 30 V Enhancement PICOSTAR
- Texas Instruments Type N-Channel MOSFET 12 V Enhancement PICOSTAR
