Infineon SIPMOS Type P-Channel MOSFET, 11.3 A, 100 V Enhancement, 3-Pin TO-220

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Subtotal (1 pack of 5 units)*

R 204,51

(exc. VAT)

R 235,185

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45R 40.902R 204.51
50 - 95R 39.88R 199.40
100 - 245R 38.684R 193.42
250 - 495R 37.136R 185.68
500 +R 35.65R 178.25

*price indicative

RS stock no.:
823-5560
Distrelec Article No.:
304-44-485
Mfr. Part No.:
SPP15P10PLHXKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

11.3A

Maximum Drain Source Voltage Vds

100V

Series

SIPMOS

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

270mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-0.96V

Maximum Power Dissipation Pd

128W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

47nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

4.57 mm

Height

15.95mm

Length

10.36mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
MY

Infineon SIPMOS® P-Channel MOSFETs


The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)

· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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