MPN

DiodesZetex Isolated 2 Type N-Channel MOSFET, 8.6 A, 20 V Enhancement, 8-Pin TSSOP DMN2016UTS-13

RS stock no.:: 822-2542
Mfr. Part No.:: DMN2016UTS-13
Manufacturer:: DiodesZetex

DiodesZetex Isolated 2 Type N-Channel MOSFET, 8.6 A, 20 V Enhancement, 8-Pin TSSOP DMN2016UTS-13

Image representative of range

Bulk discount available

Subtotal (1 pack of 20 units)*

R 183,82

(exc. VAT)

R 211,40

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

Shipping from 20 April 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
20 - 80	R 9.191	R 183.82
100 - 280	R 8.961	R 179.22
300 - 1180	R 8.692	R 173.84
1200 - 2480	R 8.344	R 166.88
2500 +	R 8.01	R 160.20

*price indicative

RS stock no.:: 822-2542
Mfr. Part No.:: DMN2016UTS-13
Manufacturer:: DiodesZetex

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	8.6A
	Maximum Drain Source Voltage Vds	20V
	Package Type	TSSOP
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	16.5mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.65V
	Minimum Operating Temperature	150°C
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Power Dissipation Pd	880mW
	Typical Gate Charge Qg @ Vgs	16.5nC
	Maximum Operating Temperature	-55°C
	Transistor Configuration	Isolated
	Width	3.1 mm
	Height	1.025mm
	Standards/Approvals	J-STD-020, MIL-STD-202, RoHS, UL 94V-0, AEC-Q101
	Length	4.5mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	Select all
	Brand DiodesZetex
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 8.6A
	Maximum Drain Source Voltage Vds 20V
	Package Type TSSOP
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 16.5mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.65V
	Minimum Operating Temperature 150°C
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Power Dissipation Pd 880mW
	Typical Gate Charge Qg @ Vgs 16.5nC
	Maximum Operating Temperature -55°C
	Transistor Configuration Isolated
	Width 3.1 mm
	Height 1.025mm
	Standards/Approvals J-STD-020, MIL-STD-202, RoHS, UL 94V-0, AEC-Q101
	Length 4.5mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

DiodesZetex Isolated 2 Type N-Channel MOSFET, 8.6 A, 20 V Enhancement, 8-Pin TSSOP DMN2016UTS-13

FREE delivery for orders over R 1,500.00

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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