Infineon StrongIRFET Type N-Channel MOSFET, 110 A, 60 V Enhancement, 3-Pin TO-220 IRFB7540PBF
- RS stock no.:
- 820-8849
- Mfr. Part No.:
- IRFB7540PBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 78,97
(exc. VAT)
R 90,815
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 45 unit(s) shipping from 29 December 2025
- Plus 505 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 15.794 | R 78.97 |
| 10 - 45 | R 15.40 | R 77.00 |
| 50 - 145 | R 14.938 | R 74.69 |
| 150 - 795 | R 14.34 | R 71.70 |
| 800 + | R 13.766 | R 68.83 |
*price indicative
- RS stock no.:
- 820-8849
- Mfr. Part No.:
- IRFB7540PBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | StrongIRFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 88nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 160W | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.83 mm | |
| Height | 16.51mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series StrongIRFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 88nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 160W | ||
Maximum Operating Temperature 175°C | ||
Width 4.83 mm | ||
Height 16.51mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Automotive Standard No | ||
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness Ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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