N-Channel MOSFET, 7.7 A, 60 V, 3-Pin DPAK Vishay IRFR014TRPBF
- RS stock no.:
- 815-2761
- Mfr. Part No.:
- IRFR014TRPBF
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 tape of 10 units)**
R 149 36
(exc. VAT)
R 171 76
(inc. VAT)
1630 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Tape** |
|---|---|---|
| 10 - 240 | R 14,936 | R 149,36 |
| 250 - 490 | R 14,563 | R 145,63 |
| 500 - 990 | R 14,126 | R 141,26 |
| 1000 - 1990 | R 13,561 | R 135,61 |
| 2000 + | R 13,019 | R 130,19 |
**price indicative
- RS stock no.:
- 815-2761
- Mfr. Part No.:
- IRFR014TRPBF
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 7.7 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 200 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 25 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 6.73mm | |
| Typical Gate Charge @ Vgs | 11 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Width | 6.22mm | |
| Height | 2.38mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 7.7 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 200 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 25 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 11 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 6.22mm | ||
Height 2.38mm | ||
Minimum Operating Temperature -55 °C | ||
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