Vishay IRFR Type N-Channel Power MOSFET, 2.6 A, 200 V Enhancement, 3-Pin TO-252 IRFR210TRPBF
- RS stock no.:
- 812-0616
- Mfr. Part No.:
- IRFR210TRPBF
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 128,78
(exc. VAT)
R 148,10
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 25 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 240 | R 12.878 | R 128.78 |
| 250 - 490 | R 12.556 | R 125.56 |
| 500 - 990 | R 12.179 | R 121.79 |
| 1000 - 1990 | R 11.692 | R 116.92 |
| 2000 + | R 11.224 | R 112.24 |
*price indicative
- RS stock no.:
- 812-0616
- Mfr. Part No.:
- IRFR210TRPBF
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 2.6A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-252 | |
| Series | IRFR | |
| Mount Type | Through Hole, Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2V | |
| Typical Gate Charge Qg @ Vgs | 8.2nC | |
| Maximum Power Dissipation Pd | 25W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 2.38mm | |
| Width | 6.22 mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 2.6A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-252 | ||
Series IRFR | ||
Mount Type Through Hole, Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2V | ||
Typical Gate Charge Qg @ Vgs 8.2nC | ||
Maximum Power Dissipation Pd 25W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 2.38mm | ||
Width 6.22 mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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