N-Channel MOSFET, 15 A, 250 V, 3-Pin TO-247AC Vishay IRFP244PBF
- RS stock no.:
- 815-2758
- Mfr. Part No.:
- IRFP244PBF
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)**
R 265 63
(exc. VAT)
R 305 48
(inc. VAT)
265 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Pack** |
|---|---|---|
| 5 - 45 | R 53,126 | R 265,63 |
| 50 - 95 | R 51,798 | R 258,99 |
| 100 - 245 | R 50,244 | R 251,22 |
| 250 - 495 | R 48,234 | R 241,17 |
| 500 + | R 46,304 | R 231,52 |
**price indicative
- RS stock no.:
- 815-2758
- Mfr. Part No.:
- IRFP244PBF
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 15 A | |
| Maximum Drain Source Voltage | 250 V | |
| Package Type | TO-247AC | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 280 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 150 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 63 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 15.87mm | |
| Number of Elements per Chip | 1 | |
| Width | 5.31mm | |
| Transistor Material | Si | |
| Height | 20.82mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 15 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type TO-247AC | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 280 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 63 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 15.87mm | ||
Number of Elements per Chip 1 | ||
Width 5.31mm | ||
Transistor Material Si | ||
Height 20.82mm | ||
Minimum Operating Temperature -55 °C | ||
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