Vishay SiHF9620S Type P-Channel MOSFET, 2 A, 200 V Enhancement, 3-Pin TO-263 SIHF9620S-GE3
- RS stock no.:
- 815-2660
- Mfr. Part No.:
- SIHF9620S-GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 171,28
(exc. VAT)
R 196,97
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 17.128 | R 171.28 |
| 100 - 240 | R 16.70 | R 167.00 |
| 250 - 490 | R 16.199 | R 161.99 |
| 500 - 990 | R 15.551 | R 155.51 |
| 1000 + | R 14.929 | R 149.29 |
*price indicative
- RS stock no.:
- 815-2660
- Mfr. Part No.:
- SIHF9620S-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | SiHF9620S | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Forward Voltage Vf | -7V | |
| Maximum Power Dissipation Pd | 40W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Width | 9.65 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series SiHF9620S | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Forward Voltage Vf -7V | ||
Maximum Power Dissipation Pd 40W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Width 9.65 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
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