Vishay SiHF620S Type N-Channel MOSFET, 5.2 A, 200 V Enhancement, 3-Pin TO-263 SIHF620S-GE3
- RS stock no.:
- 815-2629
- Mfr. Part No.:
- SIHF620S-GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 230,77
(exc. VAT)
R 265,39
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 26 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 23.077 | R 230.77 |
| 100 - 240 | R 22.50 | R 225.00 |
| 250 - 490 | R 21.825 | R 218.25 |
| 500 - 990 | R 20.952 | R 209.52 |
| 1000 + | R 20.114 | R 201.14 |
*price indicative
- RS stock no.:
- 815-2629
- Mfr. Part No.:
- SIHF620S-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.2A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-263 | |
| Series | SiHF620S | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 50W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.65 mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.2A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-263 | ||
Series SiHF620S | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 50W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Operating Temperature 150°C | ||
Width 9.65 mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Height 4.83mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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