Vishay SiHF620S Type N-Channel MOSFET, 5.2 A, 200 V Enhancement, 3-Pin TO-263 SIHF620S-GE3

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Subtotal (1 pack of 10 units)*

R 217,37

(exc. VAT)

R 249,98

(inc. VAT)

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  • Shipping from 18 August 2026
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Units
Per unit
Per Pack*
10 - 90R 21.737R 217.37
100 - 240R 21.194R 211.94
250 - 490R 20.558R 205.58
500 - 990R 19.736R 197.36
1000 +R 18.947R 189.47

*price indicative

Packaging Options:
RS stock no.:
815-2629
Mfr. Part No.:
SIHF620S-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5.2A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-263

Series

SiHF620S

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

800mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.8V

Maximum Power Dissipation Pd

50W

Typical Gate Charge Qg @ Vgs

14nC

Maximum Operating Temperature

150°C

Height

4.83mm

Standards/Approvals

No

Length

10.67mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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