Vishay SiHF620S Type N-Channel MOSFET, 5.2 A, 200 V Enhancement, 3-Pin TO-263 SIHF620S-GE3

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Subtotal (1 pack of 10 units)*

R 240,82

(exc. VAT)

R 276,94

(inc. VAT)

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  • Shipping from 19 March 2026
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Units
Per unit
Per Pack*
10 - 90R 24.082R 240.82
100 - 240R 23.48R 234.80
250 - 490R 22.776R 227.76
500 - 990R 21.865R 218.65
1000 +R 20.99R 209.90

*price indicative

Packaging Options:
RS stock no.:
815-2629
Mfr. Part No.:
SIHF620S-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5.2A

Maximum Drain Source Voltage Vds

200V

Series

SiHF620S

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

800mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.8V

Typical Gate Charge Qg @ Vgs

14nC

Maximum Power Dissipation Pd

50W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Height

4.83mm

Length

10.67mm

Standards/Approvals

No

Width

9.65 mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor


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