Vishay IRFI N-Channel MOSFET, 4 A, 200 V Enhancement, 3-Pin TO-220 IRFI620GPBF
- RS stock no.:
- 813-0708
- Distrelec Article No.:
- 304-36-635
- Mfr. Part No.:
- IRFI620GPBF
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
R 208,37
(exc. VAT)
R 239,625
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 20 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 95 | R 41.674 | R 208.37 |
| 100 - 245 | R 40.632 | R 203.16 |
| 250 - 495 | R 39.414 | R 197.07 |
| 500 - 995 | R 37.838 | R 189.19 |
| 1000 + | R 36.324 | R 181.62 |
*price indicative
- RS stock no.:
- 813-0708
- Distrelec Article No.:
- 304-36-635
- Mfr. Part No.:
- IRFI620GPBF
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | IRFI | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 30W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.3mm | |
| Width | 4.8mm | |
| Height | 29.27mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series IRFI | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 30W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Maximum Gate Source Voltage Vgs 10V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.3mm | ||
Width 4.8mm | ||
Height 29.27mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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