N-Channel MOSFET, 1.4 A, 600 V, 3-Pin IPAK Vishay IRFU1N60APBF
- RS stock no.:
- 812-0660
- Mfr. Part No.:
- IRFU1N60APBF
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)**
R 55 55
(exc. VAT)
R 63 88
(inc. VAT)
610 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Pack** |
|---|---|---|
| 10 - 290 | R 5,555 | R 55,55 |
| 300 - 590 | R 5,416 | R 54,16 |
| 600 - 1490 | R 5,254 | R 52,54 |
| 1500 - 2990 | R 5,044 | R 50,44 |
| 3000 + | R 4,842 | R 48,42 |
**price indicative
- RS stock no.:
- 812-0660
- Mfr. Part No.:
- IRFU1N60APBF
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.4 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | IPAK (TO-251) | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 7 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 36 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 2.39mm | |
| Typical Gate Charge @ Vgs | 14 nC @ 10 V | |
| Length | 6.73mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 6.22mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.4 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type IPAK (TO-251) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 7 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 36 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 2.39mm | ||
Typical Gate Charge @ Vgs 14 nC @ 10 V | ||
Length 6.73mm | ||
Maximum Operating Temperature +150 °C | ||
Height 6.22mm | ||
Minimum Operating Temperature -55 °C | ||
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