onsemi PowerTrench Type N-Channel MOSFET, 15.7 A, 100 V Enhancement, 3-Pin TO-252 FDD850N10L
- RS stock no.:
- 809-0944
- Mfr. Part No.:
- FDD850N10L
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 62,24
(exc. VAT)
R 71,58
(inc. VAT)
FREE delivery for orders over R 1,500.00
Limited stock
- 1,740 left, ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 6.224 | R 62.24 |
| 50 - 90 | R 6.068 | R 60.68 |
| 100 - 490 | R 5.886 | R 58.86 |
| 500 - 990 | R 5.651 | R 56.51 |
| 1000 + | R 5.425 | R 54.25 |
*price indicative
- RS stock no.:
- 809-0944
- Mfr. Part No.:
- FDD850N10L
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 15.7A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 96mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 22.2nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.39mm | |
| Width | 6.22 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 15.7A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 96mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 22.2nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.39mm | ||
Width 6.22 mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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