P-Channel MOSFET, 6.7 A, 12 V, 3-Pin DPAK onsemi FDD306P
- RS stock no.:
- 759-9065
- Mfr. Part No.:
- FDD306P
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 10 units)**
R 148 56
(exc. VAT)
R 170 84
(inc. VAT)
2500 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Pack** |
|---|---|---|
| 10 - 90 | R 14,856 | R 148,56 |
| 100 - 490 | R 14,485 | R 144,85 |
| 500 - 2490 | R 14,05 | R 140,50 |
| 2500 - 4990 | R 13,488 | R 134,88 |
| 5000 + | R 12,948 | R 129,48 |
**price indicative
- RS stock no.:
- 759-9065
- Mfr. Part No.:
- FDD306P
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 6.7 A | |
| Maximum Drain Source Voltage | 12 V | |
| Series | PowerTrench | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 90 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 52 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Length | 6.73mm | |
| Typical Gate Charge @ Vgs | 15 nC @ 4.5 V | |
| Transistor Material | Si | |
| Width | 6.22mm | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 6.7 A | ||
Maximum Drain Source Voltage 12 V | ||
Series PowerTrench | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 90 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 52 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 15 nC @ 4.5 V | ||
Transistor Material Si | ||
Width 6.22mm | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
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