onsemi PowerTrench Type N-Channel MOSFET, 6.1 A, 30 V Enhancement, 6-Pin SOT-23 FDC855N
- RS stock no.:
- 809-0871
- Mfr. Part No.:
- FDC855N
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 197,32
(exc. VAT)
R 226,92
(inc. VAT)
FREE delivery for orders over R 1,500.00
Being discontinued
- Final 20 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 9.866 | R 197.32 |
| 100 - 180 | R 9.62 | R 192.40 |
| 200 - 980 | R 9.331 | R 186.62 |
| 1000 - 1980 | R 8.958 | R 179.16 |
| 2000 + | R 8.60 | R 172.00 |
*price indicative
- RS stock no.:
- 809-0871
- Mfr. Part No.:
- FDC855N
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.1A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 39mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 9.2nC | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 3mm | |
| Width | 1.7 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.1A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 39mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 9.2nC | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 3mm | ||
Width 1.7 mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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