onsemi UltraFET Type N-Channel MOSFET, 75 A, 55 V Enhancement, 3-Pin TO-220 HUF75345P3
- RS stock no.:
- 807-6686
- Mfr. Part No.:
- HUF75345P3
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 152,87
(exc. VAT)
R 175,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 27 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 30.574 | R 152.87 |
| 25 - 45 | R 29.81 | R 149.05 |
| 50 - 245 | R 28.916 | R 144.58 |
| 250 - 495 | R 27.76 | R 138.80 |
| 500 + | R 26.65 | R 133.25 |
*price indicative
- RS stock no.:
- 807-6686
- Mfr. Part No.:
- HUF75345P3
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | UltraFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.25V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 220nC | |
| Maximum Power Dissipation Pd | 325W | |
| Maximum Operating Temperature | 175°C | |
| Height | 16.3mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Width | 4.7 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series UltraFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.25V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 220nC | ||
Maximum Power Dissipation Pd 325W | ||
Maximum Operating Temperature 175°C | ||
Height 16.3mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Width 4.7 mm | ||
Automotive Standard No | ||
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable Benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi UltraFET N-Channel MOSFET 55 V, 3-Pin TO-220AB HUF75345P3
- onsemi UltraFET N-Channel MOSFET 55 V, 3-Pin TO-220AB HUF75344P3
- onsemi UltraFET N-Channel MOSFET 55 V, 3-Pin TO-220AB HUF75545P3
- onsemi UltraFET N-Channel MOSFET 55 V, 3-Pin TO-220AB HUF75339P3
- onsemi UltraFET N-Channel MOSFET 55 V, 3-Pin TO-247 HUF75344G3
- onsemi UltraFET N-Channel MOSFET 80 V, 3-Pin TO-220AB HUF75645P3
- onsemi UltraFET N-Channel MOSFET 55 V, 3-Pin TO-220AB HUF75321P3
- onsemi UltraFET N-Channel MOSFET 100 V, 3-Pin TO-247 HUF75652G3