onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 6.5 A, 20 V Enhancement, 8-Pin SOIC FDS9934C
- RS stock no.:
- 806-3680
- Mfr. Part No.:
- FDS9934C
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 tape of 10 units)*
R 37,35
(exc. VAT)
R 42,95
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- 70 left, ready to ship from another location
- Final 2,190 unit(s) shipping from 05 January 2026
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 40 | R 3.735 | R 37.35 |
| 50 - 90 | R 3.642 | R 36.42 |
| 100 - 490 | R 3.533 | R 35.33 |
| 500 - 990 | R 3.392 | R 33.92 |
| 1000 + | R 3.256 | R 32.56 |
*price indicative
- RS stock no.:
- 806-3680
- Mfr. Part No.:
- FDS9934C
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOIC | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 6.2nC | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | 0.73V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 4.9mm | |
| Width | 3.9 mm | |
| Height | 1.575mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 6.2nC | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf 0.73V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 4.9mm | ||
Width 3.9 mm | ||
Height 1.575mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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