onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 4.5 A, 100 V Enhancement, 8-Pin SOIC FDS3992

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Subtotal (1 pack of 5 units)*

R 166,93

(exc. VAT)

R 191,97

(inc. VAT)

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  • Ready to ship from 17 June 2026
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Units
Per unit
Per Pack*
5 - 20R 33.386R 166.93
25 - 45R 32.552R 162.76
50 - 245R 31.576R 157.88
250 - 495R 30.312R 151.56
500 +R 29.10R 145.50

*price indicative

Packaging Options:
RS stock no.:
806-3649
Mfr. Part No.:
FDS3992
Manufacturer:
onsemi
Find similar products by selecting one or more attributes.
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.5A

Maximum Drain Source Voltage Vds

100V

Series

PowerTrench

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

123mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

150°C

Typical Gate Charge Qg @ Vgs

11nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2.5W

Transistor Configuration

Isolated

Maximum Operating Temperature

-55°C

Width

3.9 mm

Length

4.9mm

Height

1.575mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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