onsemi UniFET Type N-Channel MOSFET, 10 A, 600 V Enhancement, 3-Pin TO-220F FDPF10N60NZ
- RS stock no.:
- 806-3582
- Mfr. Part No.:
- FDPF10N60NZ
- Manufacturer:
- onsemi
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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS stock no.:
- 806-3582
- Mfr. Part No.:
- FDPF10N60NZ
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | UniFET | |
| Package Type | TO-220F | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 750mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 38W | |
| Maximum Gate Source Voltage Vgs | ±25 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.36mm | |
| Height | 16.07mm | |
| Width | 4.9 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series UniFET | ||
Package Type TO-220F | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 750mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 38W | ||
Maximum Gate Source Voltage Vgs ±25 V | ||
Maximum Operating Temperature 150°C | ||
Length 10.36mm | ||
Height 16.07mm | ||
Width 4.9 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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