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    N-Channel MOSFET, 10 A, 1000 V, 3-Pin ISOPLUS247 IXYS IXFR15N100Q3

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    Subtotal (1 tube of 30 units)**

    R  11 066 82

    (exc. VAT)

    R  12 726 84

    (inc. VAT)

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    90 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Not Available for premium delivery
    Units
    Per unit
    Per Tube**
    30 +R 368,894R 11 066,82

    **price indicative

    RS stock no.:
    168-4707
    Mfr. Part No.:
    IXFR15N100Q3
    Manufacturer:
    IXYS
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    Manufacturer

    IXYS

    Channel Type

    N

    Maximum Continuous Drain Current

    10 A

    Maximum Drain Source Voltage

    1000 V

    Package Type

    ISOPLUS247

    Series

    HiperFET, Q3-Class

    Mounting Type

    Through Hole

    Pin Count

    3

    Maximum Drain Source Resistance

    1.2 Ω

    Channel Mode

    Enhancement

    Maximum Gate Threshold Voltage

    6.5V

    Maximum Power Dissipation

    400 W

    Transistor Configuration

    Single

    Maximum Gate Source Voltage

    -30 V, +30 V

    Maximum Operating Temperature

    +150 °C

    Number of Elements per Chip

    1

    Width

    5.21mm

    Typical Gate Charge @ Vgs

    64 nC @ 10 V

    Length

    16.13mm

    Transistor Material

    Si

    Minimum Operating Temperature

    -55 °C

    Height

    21.34mm

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