onsemi 2V7002K N-Channel MOSFET, 320 mA, 60 V Enhancement, 3-Pin SOT-23 2V7002KT1G
- RS stock no.:
- 800-9361
- Mfr. Part No.:
- 2V7002KT1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 200 units)*
R 284,00
(exc. VAT)
R 326,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 02 November 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 200 - 200 | R 1.42 | R 284.00 |
| 400 - 600 | R 1.384 | R 276.80 |
| 800 - 1400 | R 1.343 | R 268.60 |
| 1600 - 2200 | R 1.289 | R 257.80 |
| 2400 + | R 1.237 | R 247.40 |
*price indicative
- RS stock no.:
- 800-9361
- Mfr. Part No.:
- 2V7002KT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 320mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | 2V7002K | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 420mW | |
| Typical Gate Charge Qg @ Vgs | 0.7nC | |
| Forward Voltage Vf | 800mV | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Height | 1.01mm | |
| Standards/Approvals | No | |
| Width | 1.4mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 320mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series 2V7002K | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 420mW | ||
Typical Gate Charge Qg @ Vgs 0.7nC | ||
Forward Voltage Vf 800mV | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Height 1.01mm | ||
Standards/Approvals No | ||
Width 1.4mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET with Schottky Diode, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Related links
- onsemi 2V7002K N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 2V7002KT1G
- Nexperia BSS138BKW N-Channel MOSFET 60 V Enhancement115
- Nexperia BSS138PW N-Channel MOSFET 60 V Enhancement115
- Nexperia BSS138PW N-Channel MOSFET 60 V Enhancement, 3-Pin SC-70
- Nexperia Single Trench MOSFET 1 N-Channel MOSFET 60 V Enhancement115
- Nexperia Isolated Trench MOSFET 2 N-Channel MOSFET 60 V Enhancement115
- DiodesZetex N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 ZVN3306FTA
- DiodesZetex N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 VN10LFTA