Nexperia Type N-Channel MOSFET, 100 A, 30 V Enhancement, 4-Pin SOT-669 PSMN1R7-30YL,115
- RS stock no.:
- 798-2912
- Mfr. Part No.:
- PSMN1R7-30YL,115
- Manufacturer:
- Nexperia
Image representative of range
Bulk discount available
Subtotal (1 tape of 5 units)*
R 190,02
(exc. VAT)
R 218,525
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 455 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | R 38.004 | R 190.02 |
| 50 - 245 | R 37.054 | R 185.27 |
| 250 - 495 | R 35.942 | R 179.71 |
| 500 - 1495 | R 34.504 | R 172.52 |
| 1500 + | R 33.124 | R 165.62 |
*price indicative
- RS stock no.:
- 798-2912
- Mfr. Part No.:
- PSMN1R7-30YL,115
- Manufacturer:
- Nexperia
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-669 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 2.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 77.9nC | |
| Maximum Power Dissipation Pd | 109W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.1mm | |
| Length | 5mm | |
| Width | 4.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-669 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 2.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 77.9nC | ||
Maximum Power Dissipation Pd 109W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 1.1mm | ||
Length 5mm | ||
Width 4.1 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
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