STMicroelectronics STripFET H7 N-Channel MOSFET, 30 A, 100 V Enhancement, 8-Pin PowerFLAT STL30N10F7
- RS stock no.:
- 792-5892
- Mfr. Part No.:
- STL30N10F7
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
R 60,61
(exc. VAT)
R 69,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 3,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 12.122 | R 60.61 |
| 10 - 20 | R 11.818 | R 59.09 |
| 25 - 45 | R 11.464 | R 57.32 |
| 50 - 120 | R 11.006 | R 55.03 |
| 125 + | R 10.566 | R 52.83 |
*price indicative
- RS stock no.:
- 792-5892
- Mfr. Part No.:
- STL30N10F7
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerFLAT | |
| Series | STripFET H7 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 75W | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.35mm | |
| Width | 5.4mm | |
| Height | 0.95mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerFLAT | ||
Series STripFET H7 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 75W | ||
Maximum Operating Temperature 175°C | ||
Length 6.35mm | ||
Width 5.4mm | ||
Height 0.95mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Related links
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