STMicroelectronics MDmesh M2 Type N-Channel MOSFET, 11 A, 650 V Enhancement, 3-Pin TO-263 STB13N60M2
- RS stock no.:
- 792-5694
- Mfr. Part No.:
- STB13N60M2
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 233,72
(exc. VAT)
R 268,78
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 07 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 46.744 | R 233.72 |
| 25 - 95 | R 45.576 | R 227.88 |
| 100 - 245 | R 44.208 | R 221.04 |
| 250 - 495 | R 42.44 | R 212.20 |
| 500 + | R 40.742 | R 203.71 |
*price indicative
- RS stock no.:
- 792-5694
- Mfr. Part No.:
- STB13N60M2
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | MDmesh M2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 380mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 110W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Height | 4.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series MDmesh M2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 380mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 110W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Height 4.6mm | ||
Automotive Standard No | ||
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 STB18N60M2
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- STMicroelectronics MDmesh M2 Type N-Channel Power MOSFET 650 V Enhancement, 3-Pin TO-220FP
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220