STMicroelectronics MDmesh M2 N-Channel MOSFET, 11 A, 650 V Enhancement, 3-Pin TO-263 STB13N60M2

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Subtotal (1 pack of 5 units)*

R 240,58

(exc. VAT)

R 276,66

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 20R 48.116R 240.58
25 - 95R 46.914R 234.57
100 - 245R 45.506R 227.53
250 - 495R 43.686R 218.43
500 +R 41.938R 209.69

*price indicative

Packaging Options:
RS stock no.:
792-5694
Mfr. Part No.:
STB13N60M2
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-263

Series

MDmesh M2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

380mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

17nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-25V, +25V

Maximum Power Dissipation Pd

110W

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Length

10.4mm

Height

4.6mm

Width

9.35mm

Standards/Approvals

No

Automotive Standard

No

N-channel MDmesh™ M2 Series, STMicroelectronics


A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics


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