Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23 SQ2310ES-T1_BE3

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Subtotal (1 pack of 10 units)*

R 130,87

(exc. VAT)

R 150,50

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40R 13.087R 130.87
50 - 240R 12.76R 127.60
250 - 990R 12.377R 123.77
1000 - 2990R 11.882R 118.82
3000 +R 11.407R 114.07

*price indicative

Packaging Options:
RS stock no.:
787-9443
Mfr. Part No.:
SQ2310ES-T1_BE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

TrenchFET Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

20V

Series

SQ Rugged

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.03Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

8.5nC

Maximum Power Dissipation Pd

2W

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±8 V

Maximum Operating Temperature

175°C

Width

1.4 mm

Length

3.04mm

Standards/Approvals

IEC 61249-2-21, RoHS: 2002/95/EC

Height

1.02mm

Automotive Standard

AEC-Q101

N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor


The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.

Advantages of SQ Rugged Series MOSFETs


• AEC-Q101 qualified

• Junction temperature up to +175°C

• Low on-resistance n- and p-channel TrenchFET® technologies

• Innovative space-saving package options

MOSFET Transistors, Vishay Semiconductor


Approvals

AEC-Q101

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