Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23 SQ2310ES-T1_BE3
- RS stock no.:
- 787-9443
- Mfr. Part No.:
- SQ2310ES-T1_BE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 10 units)*
R 154,01
(exc. VAT)
R 177,11
(inc. VAT)
FREE delivery for orders over R 1,500.00
Being discontinued
- Plus 20 unit(s) shipping from 01 June 2026
- Final 1,810 unit(s) shipping from 08 June 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 15.401 | R 154.01 |
| 50 - 240 | R 15.016 | R 150.16 |
| 250 - 990 | R 14.566 | R 145.66 |
| 1000 - 2990 | R 13.983 | R 139.83 |
| 3000 + | R 13.424 | R 134.24 |
*price indicative
- RS stock no.:
- 787-9443
- Mfr. Part No.:
- SQ2310ES-T1_BE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | TrenchFET Power MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | SQ Rugged | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.03Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8.5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS: 2002/95/EC | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type TrenchFET Power MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series SQ Rugged | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.03Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8.5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Operating Temperature 175°C | ||
Height 1.02mm | ||
Length 3.04mm | ||
Standards/Approvals IEC 61249-2-21, RoHS: 2002/95/EC | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
Related links
- Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET 20 V Enhancement, 3-Pin SOT-23
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- Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin TO-252 SQD25N06-22L_GE3
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- Vishay SQ Rugged Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay SQ Rugged Type P-Channel MOSFET 12 V Enhancement, 3-Pin SOT-23 SQ2315ES-T1_GE3
- Vishay SQ Rugged Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 SQ2301ES-T1-GE3
- Vishay SQ Rugged Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252