Vishay TrenchFET Type N-Channel MOSFET, 58 A, 30 V Enhancement, 8-Pin SO-8 SIRA14DP-T1-GE3

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Subtotal (1 tape of 10 units)*

R 115,19

(exc. VAT)

R 132,47

(inc. VAT)

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Units
Per unit
Per Tape*
10 - 40R 11.519R 115.19
50 - 240R 11.231R 112.31
250 - 990R 10.894R 108.94
1000 - 2990R 10.458R 104.58
3000 +R 10.04R 100.40

*price indicative

Packaging Options:
RS stock no.:
787-9389
Mfr. Part No.:
SIRA14DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

8.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

19.4nC

Forward Voltage Vf

0.76V

Maximum Power Dissipation Pd

31.2W

Maximum Operating Temperature

150°C

Length

6.25mm

Height

1.12mm

Standards/Approvals

No

Width

5.26 mm

Automotive Standard

No

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