Vishay Type N-Channel Power MOSFET, 8.7 A, 500 V Enhancement, 3-Pin TO-220AB
- RS stock no.:
- 787-9181
- Mfr. Part No.:
- SIHP8N50D-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 144,68
(exc. VAT)
R 166,38
(inc. VAT)
Add 55 units to get free delivery
Last RS stock
- 5 left, ready to ship from another location
- Final 10 unit(s) shipping from 20 February 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 28.936 | R 144.68 |
| 50 - 245 | R 28.212 | R 141.06 |
| 250 - 995 | R 27.366 | R 136.83 |
| 1000 - 4995 | R 26.272 | R 131.36 |
| 5000 + | R 25.222 | R 126.11 |
*price indicative
- RS stock no.:
- 787-9181
- Mfr. Part No.:
- SIHP8N50D-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 8.7A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.85Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 156W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.51mm | |
| Height | 9.01mm | |
| Standards/Approvals | No | |
| Width | 4.65 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 8.7A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.85Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 156W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Operating Temperature 150°C | ||
Length 10.51mm | ||
Height 9.01mm | ||
Standards/Approvals No | ||
Width 4.65 mm | ||
Automotive Standard No | ||
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-220AB SIHP8N50D-GE3
- Vishay Type N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-220AB
- Vishay Type N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-220AB SIHP6N40D-GE3
- Vishay Single EF 1 Type N-Channel Power MOSFET 600 V, 3-Pin TO-220AB
- Vishay Single E 1 Type N-Channel Power MOSFET 500 V, 3-Pin TO-220AB
- Vishay IRF620 Type N-Channel Power MOSFET 200 V Enhancement, 3-Pin TO-220AB
- Vishay Single E 1 Type N-Channel Power MOSFET 500 V, 3-Pin TO-220AB SIHP25N50E-GE3
- Vishay Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220AB IRF840HPBF