Vishay IRFL N-Channel MOSFET, 1.5 A, 100 V Enhancement, 4-Pin SOT-223 IRFL110TRPBF
- RS stock no.:
- 787-9033
- Mfr. Part No.:
- IRFL110TRPBF
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 238,87
(exc. VAT)
R 274,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 10 unit(s) ready to ship from another location
- Plus 2,450 unit(s) shipping from 21 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 23.887 | R 238.87 |
| 50 - 240 | R 23.29 | R 232.90 |
| 250 - 990 | R 22.591 | R 225.91 |
| 1000 - 2490 | R 21.687 | R 216.87 |
| 2500 + | R 20.82 | R 208.20 |
*price indicative
- RS stock no.:
- 787-9033
- Mfr. Part No.:
- IRFL110TRPBF
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IRFL | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 540mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 2.5V | |
| Maximum Power Dissipation Pd | 3.1W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8.3nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Standards/Approvals | No | |
| Width | 3.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IRFL | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 540mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 2.5V | ||
Maximum Power Dissipation Pd 3.1W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8.3nC | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Height 1.8mm | ||
Standards/Approvals No | ||
Width 3.7mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay IRFL Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
- Vishay IRFL Type N-Channel MOSFET 200 V Enhancement, 4-Pin SOT-223
- Vishay IRFL Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
- Vishay IRFL Type N-Channel MOSFET 200 V Enhancement, 4-Pin SOT-223 IRFL210TRPBF
- Vishay IRFL Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223 IRFL014TRPBF
- Vishay IRFL Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
- Vishay IRFL Type P-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
- Vishay IRFL Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223 IRFL9014TRPBF