Infineon Single HEXFET 1 N-Channel MOSFET, 86 A, 55 V Enhancement, 3-Pin TO-220AB AUIRL3705Z
- RS stock no.:
- 784-9215
- Mfr. Part No.:
- AUIRL3705Z
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
R 214,82
(exc. VAT)
R 247,05
(inc. VAT)
FREE delivery for orders over R 1,500.00
Being discontinued
- Final 20 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 42.964 | R 214.82 |
| 25 - 95 | R 41.89 | R 209.45 |
| 100 - 245 | R 40.634 | R 203.17 |
| 250 - 495 | R 39.008 | R 195.04 |
| 500 + | R 37.448 | R 187.24 |
*price indicative
- RS stock no.:
- 784-9215
- Mfr. Part No.:
- AUIRL3705Z
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 86A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -16V, +16V | |
| Maximum Power Dissipation Pd | 130W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Single | |
| Width | 4.83mm | |
| Length | 10.67mm | |
| Height | 9.02mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 86A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -16V, +16V | ||
Maximum Power Dissipation Pd 130W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Single | ||
Width 4.83mm | ||
Length 10.67mm | ||
Height 9.02mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MX
Infineon HEXFET Series MOSFET, 75A/86A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - AUIRL3705Z
This MOSFET is tailored for automotive applications, ensuring solid performance in challenging environments. It incorporates Advanced processing techniques that enhance efficiency and lower on-resistance, making it Crucial for high-current systems. The comprehensive safety and thermal management features reinforce its importance in modern electronic applications.
Features & Benefits
• Maximum continuous drain current of 86A for robust usage
• Low on-resistance of up to 8mΩ for improved efficiency
• Fast switching capability, optimising overall system performance
• Reliable operation at high temperatures, up to 175°C
• Complies with automotive qualifications per AEC-Q101 standards
• High power dissipation capacity of up to 130W
Applications
• Suitable for automotive power management systems
• Utilised in electric vehicle powertrains
• Applicable in DC-DC converters within automotive electronics
• Employed in battery management systems
• Effective for motor control in machinery
What is the maximum gate-source voltage this component can handle?
It can manage a maximum gate-source voltage of ±16V, ensuring compatibility with various control circuits.
How does the high current capability benefit my application?
The continuous drain current rating of 86A enables stable operations in power-intensive applications, enhancing efficiency and reducing thermal stress.
Can this component operate efficiently at elevated temperatures?
Yes, it is designed for effective operation at temperatures up to 175°C, making it suitable for automotive environments.
Is there a risk of damage if the recommended operating conditions are exceeded?
Yes, exceeding the specified absolute maximum ratings may result in permanent device damage. It is essential to operate within the recommended limits for reliability.
How does the low Rds(on) specification affect performance?
The low Rds(on) improves energy efficiency by minimising power loss, resulting in enhanced overall system performance.
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