STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 22 A, 600 V Enhancement, 5-Pin PowerFLAT STL36N55M5
- RS stock no.:
- 783-3113
- Mfr. Part No.:
- STL36N55M5
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 581,78
(exc. VAT)
R 669,045
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,095 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 116.356 | R 581.78 |
| 50 - 245 | R 113.448 | R 567.24 |
| 250 - 495 | R 110.044 | R 550.22 |
| 500 - 2995 | R 105.642 | R 528.21 |
| 3000 + | R 101.416 | R 507.08 |
*price indicative
- RS stock no.:
- 783-3113
- Mfr. Part No.:
- STL36N55M5
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | MDmesh M5 | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.8W | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 62nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 8mm | |
| Standards/Approvals | No | |
| Height | 0.95mm | |
| Width | 8 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series MDmesh M5 | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.8W | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 62nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Length 8mm | ||
Standards/Approvals No | ||
Height 0.95mm | ||
Width 8 mm | ||
Automotive Standard No | ||
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
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