N-Channel MOSFET, 30 A, 710 V, 3-Pin TO-247 STMicroelectronics STW38N65M5
- RS stock no.:
- 783-2999
- Mfr. Part No.:
- STW38N65M5
- Manufacturer:
- STMicroelectronics
Subtotal (1 unit)**
R 99 84
(exc. VAT)
R 114 82
(inc. VAT)
On back order for despatch 2025/08/07*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit |
|---|---|
| 1 + | R 99,84 |
**price indicative
- RS stock no.:
- 783-2999
- Mfr. Part No.:
- STW38N65M5
- Manufacturer:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 710 V | |
| Series | MDmesh M5 | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 95 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 190 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Length | 15.75mm | |
| Typical Gate Charge @ Vgs | 71 nC @ 10 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 5.15mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 20.15mm | |
Select all | ||
|---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 710 V | ||
Series MDmesh M5 | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 95 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 190 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Length 15.75mm | ||
Typical Gate Charge @ Vgs 71 nC @ 10 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 5.15mm | ||
Maximum Operating Temperature +150 °C | ||
Height 20.15mm | ||
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