STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 35 A, 710 V Enhancement, 3-Pin TO-263 STB45N65M5

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R 124,03

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R 142,63

(inc. VAT)

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1 - 9R 124.03
10 - 49R 120.93
50 - 149R 117.30
150 - 499R 112.61
500 +R 108.11

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Packaging Options:
RS stock no.:
783-2949
Mfr. Part No.:
STB45N65M5
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

710V

Series

MDmesh M5

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

78mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

25 V

Typical Gate Charge Qg @ Vgs

82nC

Maximum Power Dissipation Pd

210W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Width

9.35 mm

Length

10.4mm

Height

4.6mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

N-channel MDmesh™ M5 Series, STMicroelectronics


The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.

MOSFET Transistors, STMicroelectronics


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