onsemi Type N-Channel MOSFET, 2.5 A, 30 V Enhancement, 3-Pin SOT-23 NVTR4503NT1G
- RS stock no.:
- 780-4815
- Mfr. Part No.:
- NVTR4503NT1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 tape of 25 units)*
R 43,60
(exc. VAT)
R 50,15
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 550 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 25 - 25 | R 1.744 | R 43.60 |
| 50 - 100 | R 1.70 | R 42.50 |
| 125 - 225 | R 1.649 | R 41.23 |
| 250 - 475 | R 1.583 | R 39.58 |
| 500 + | R 1.52 | R 38.00 |
*price indicative
- RS stock no.:
- 780-4815
- Mfr. Part No.:
- NVTR4503NT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.6nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 730mW | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Height | 1.01mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.6nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 730mW | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Height 1.01mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Related links
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