onsemi Isolated 2 Type P-Channel Small Signal, 430 mA, 20 V Enhancement, 6-Pin SOT-563 NTZD3152PT1G
- RS stock no.:
- 780-4795
- Mfr. Part No.:
- NTZD3152PT1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 146,75
(exc. VAT)
R 168,75
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 3,425 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 5.87 | R 146.75 |
| 50 - 100 | R 5.724 | R 143.10 |
| 125 - 225 | R 5.552 | R 138.80 |
| 250 - 475 | R 5.33 | R 133.25 |
| 500 + | R 5.117 | R 127.93 |
*price indicative
- RS stock no.:
- 780-4795
- Mfr. Part No.:
- NTZD3152PT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Small Signal | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 430mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-563 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 280mW | |
| Forward Voltage Vf | -0.8V | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Width | 1.3 mm | |
| Standards/Approvals | No | |
| Length | 1.7mm | |
| Height | 0.6mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Small Signal | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 430mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-563 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 280mW | ||
Forward Voltage Vf -0.8V | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Width 1.3 mm | ||
Standards/Approvals No | ||
Length 1.7mm | ||
Height 0.6mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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