onsemi Dual 2 N-Channel Small Signal, 540 mA, 20 V Enhancement, 6-Pin SOT-563 NTZD3154NT1G
- RS stock no.:
- 184-1406
- Mfr. Part No.:
- NTZD3154NT1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 100 units)*
R 252,30
(exc. VAT)
R 290,10
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 400 | R 2.523 | R 252.30 |
| 500 - 900 | R 2.46 | R 246.00 |
| 1000 - 1900 | R 2.386 | R 238.60 |
| 2000 - 2900 | R 2.291 | R 229.10 |
| 3000 + | R 2.199 | R 219.90 |
*price indicative
- RS stock no.:
- 184-1406
- Mfr. Part No.:
- NTZD3154NT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Small Signal | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 540mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-563 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 250mW | |
| Maximum Gate Source Voltage Vgs | 7V | |
| Typical Gate Charge Qg @ Vgs | 1.5nC | |
| Forward Voltage Vf | 700mV | |
| Maximum Operating Temperature | +150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | No | |
| Width | 1.3mm | |
| Height | 600μm | |
| Length | 1.7mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Small Signal | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 540mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-563 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 250mW | ||
Maximum Gate Source Voltage Vgs 7V | ||
Typical Gate Charge Qg @ Vgs 1.5nC | ||
Forward Voltage Vf 700mV | ||
Maximum Operating Temperature +150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals No | ||
Width 1.3mm | ||
Height 600μm | ||
Length 1.7mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
This is a 20 V N-Channel Power MOSFET.
Low RDS(on) Improving System Efficiency
Low Threshold Voltage
Small Footprint 1.6 x 1.6 mm
ESD Protected Gate
Applications:
Load/Power Switches
Power Supply Converter Circuits
Battery Management
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