onsemi Isolated 2 Type P-Channel MOSFET, 880 mA, 20 V Enhancement, 6-Pin SOT-363 NTJD4152PT1G
- RS stock no.:
- 780-0611
- Mfr. Part No.:
- NTJD4152PT1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 114,60
(exc. VAT)
R 131,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
Limited stock
- 23,150 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 4.584 | R 114.60 |
| 50 - 100 | R 4.47 | R 111.75 |
| 125 - 225 | R 4.336 | R 108.40 |
| 250 - 475 | R 4.162 | R 104.05 |
| 500 + | R 3.996 | R 99.90 |
*price indicative
- RS stock no.:
- 780-0611
- Mfr. Part No.:
- NTJD4152PT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 880mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.2nC | |
| Maximum Power Dissipation Pd | 350mW | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -0.8V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Width | 1.35 mm | |
| Length | 2.2mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 880mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.2nC | ||
Maximum Power Dissipation Pd 350mW | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -0.8V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Standards/Approvals No | ||
Height 1mm | ||
Width 1.35 mm | ||
Length 2.2mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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