onsemi NTGS Type P-Channel MOSFET, 2.9 A, 60 V Enhancement, 6-Pin TSOP NTGS5120PT1G
- RS stock no.:
- 780-0579
- Mfr. Part No.:
- NTGS5120PT1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 tape of 25 units)*
R 153,95
(exc. VAT)
R 177,05
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 5,350 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 25 - 25 | R 6.158 | R 153.95 |
| 50 - 100 | R 6.004 | R 150.10 |
| 125 - 225 | R 5.824 | R 145.60 |
| 250 - 475 | R 5.592 | R 139.80 |
| 500 + | R 5.368 | R 134.20 |
*price indicative
- RS stock no.:
- 780-0579
- Mfr. Part No.:
- NTGS5120PT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TSOP | |
| Series | NTGS | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 142mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.4W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 18.1nC | |
| Forward Voltage Vf | -1V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.7 mm | |
| Height | 1mm | |
| Length | 3.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TSOP | ||
Series NTGS | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 142mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.4W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 18.1nC | ||
Forward Voltage Vf -1V | ||
Maximum Operating Temperature 150°C | ||
Width 1.7 mm | ||
Height 1mm | ||
Length 3.1mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
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