Renesas N-Channel MOSFET, 4 A, 43 V, 3-Pin SOT-346 2SK3408-T1B-A
- RS stock no.:
- 772-5425P
- Mfr. Part No.:
- 2SK3408-T1B-A
- Manufacturer:
- Renesas Electronics
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Bulk discount available
Subtotal 80 units (supplied on a continuous strip)*
R 414,32
(exc. VAT)
R 476,48
(inc. VAT)
FREE delivery for orders over R 1,500.00
Stock information currently inaccessible
Units | Per unit |
|---|---|
| 80 - 380 | R 5.179 |
| 400 - 980 | R 5.023 |
| 1000 - 11980 | R 4.822 |
| 12000 + | R 4.629 |
*price indicative
- RS stock no.:
- 772-5425P
- Mfr. Part No.:
- 2SK3408-T1B-A
- Manufacturer:
- Renesas Electronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4 A | |
| Maximum Drain Source Voltage | 43 V | |
| Package Type | SOT-346 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 260 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 1.25 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 4 nC @ 10 V | |
| Length | 2.9mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 1.5mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1mm | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 4 A | ||
Maximum Drain Source Voltage 43 V | ||
Package Type SOT-346 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 260 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 1.25 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 4 nC @ 10 V | ||
Length 2.9mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 1.5mm | ||
Maximum Operating Temperature +150 °C | ||
Height 1mm | ||
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