Renesas N-Channel MOSFET, 10 A, 900 V, 3-Pin TO-220FM 2SK1808-E
- RS stock no.:
- 772-5327P
- Mfr. Part No.:
- 2SK1808-E
- Manufacturer:
- Renesas Electronics
Unavailable
RS will no longer stock this product.
- RS stock no.:
- 772-5327P
- Mfr. Part No.:
- 2SK1808-E
- Manufacturer:
- Renesas Electronics
Specification
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 900 V | |
| Package Type | TO-220FM | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 35 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10mm | |
| Number of Elements per Chip | 1 | |
| Width | 4.45mm | |
| Height | 17mm | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 900 V | ||
Package Type TO-220FM | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 35 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Length 10mm | ||
Number of Elements per Chip 1 | ||
Width 4.45mm | ||
Height 17mm | ||