onsemi MegaFET Type N-Channel MOSFET, 16 A, 50 V Enhancement, 3-Pin TO-252 RFD16N05LSM9A
- RS stock no.:
- 761-3574
- Mfr. Part No.:
- RFD16N05LSM9A
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 109,03
(exc. VAT)
R 125,385
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,330 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 21.806 | R 109.03 |
| 50 - 245 | R 21.26 | R 106.30 |
| 250 - 495 | R 20.622 | R 103.11 |
| 500 - 2495 | R 19.798 | R 98.99 |
| 2500 + | R 19.006 | R 95.03 |
*price indicative
- RS stock no.:
- 761-3574
- Mfr. Part No.:
- RFD16N05LSM9A
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | TO-252 | |
| Series | MegaFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 47mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Power Dissipation Pd | 60W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.39mm | |
| Width | 6.22 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type TO-252 | ||
Series MegaFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 47mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Power Dissipation Pd 60W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.39mm | ||
Width 6.22 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
MegaFET MOSFET, Fairchild Semiconductor
The MegaFET process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilisation of silicon, resulting in outstanding performance.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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