onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 2.3 A, 60 V Enhancement, 8-Pin SOIC NDS9948

RS stock no.:: 761-3397
Mfr. Part No.:: NDS9948
Manufacturer:: onsemi

onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 2.3 A, 60 V Enhancement, 8-Pin SOIC NDS9948

Image representative of range

Bulk discount available

Subtotal (1 pack of 5 units)*

R 80,76

(exc. VAT)

R 92,875

(inc. VAT)

FREE delivery for orders over R 1,500.00

Supply shortage

Plus 15 left, shipping from 29 December 2025
Plus 4,140 left, shipping from 05 January 2026

Our current stock is limited and our suppliers are expecting shortages.

Units	Per unit	Per Pack*
5 - 45	R 16.152	R 80.76
50 - 245	R 15.748	R 78.74
250 - 495	R 15.276	R 76.38
500 - 2495	R 14.664	R 73.32
2500 +	R 14.078	R 70.39

*price indicative

RS stock no.:: 761-3397
Mfr. Part No.:: NDS9948
Manufacturer:: onsemi

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	2.3A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOIC
	Series	PowerTrench
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	500mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	9nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-0.8V
	Maximum Power Dissipation Pd	2W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Transistor Configuration	Isolated
	Length	5mm
	Standards/Approvals	No
	Height	1.5mm
	Width	4 mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 2.3A
	Maximum Drain Source Voltage Vds 60V
	Package Type SOIC
	Series PowerTrench
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 500mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 9nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -0.8V
	Maximum Power Dissipation Pd 2W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Transistor Configuration Isolated
	Length 5mm
	Standards/Approvals No
	Height 1.5mm
	Width 4 mm
	Number of Elements per Chip 2
	Automotive Standard No

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 2.3 A, 60 V Enhancement, 8-Pin SOIC NDS9948

FREE delivery for orders over R 1,500.00

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

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