STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 33 A, 650 V Enhancement, 3-Pin TO-263 STB42N65M5

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Subtotal (1 unit)*

R 140,08

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R 161,09

(inc. VAT)

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1 - 9R 140.08
10 - 49R 136.58
50 - 149R 132.48
150 - 499R 127.18
500 +R 122.09

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Packaging Options:
RS stock no.:
761-0402
Mfr. Part No.:
STB42N65M5
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-263

Series

MDmesh M5

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

79mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

190W

Typical Gate Charge Qg @ Vgs

100nC

Maximum Operating Temperature

150°C

Height

4.6mm

Width

10.4 mm

Standards/Approvals

No

Length

10.75mm

Automotive Standard

No

N-channel MDmesh™ M5 Series, STMicroelectronics


The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.

MOSFET Transistors, STMicroelectronics


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