N-Channel MOSFET, 2.5 A, 1500 V, 3-Pin TO-247 STMicroelectronics STW3N150
- RS stock no.:
- 761-0320
- Mfr. Part No.:
- STW3N150
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (1 unit)**
R 83 29
(exc. VAT)
R 95 78
(inc. VAT)
On back order for despatch 2025/04/04*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit |
---|---|
1 - 9 | R 83,29 |
10 - 49 | R 81,21 |
50 - 149 | R 78,77 |
150 - 499 | R 75,62 |
500 + | R 72,60 |
**price indicative
- RS stock no.:
- 761-0320
- Mfr. Part No.:
- STW3N150
- Manufacturer:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 2.5 A | |
Maximum Drain Source Voltage | 1500 V | |
Series | MDmesh | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 9 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 140 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Typical Gate Charge @ Vgs | 29.3 nC @ 10 V | |
Width | 5.15mm | |
Transistor Material | Si | |
Length | 15.75mm | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Height | 20.15mm | |
Select all | ||
---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.5 A | ||
Maximum Drain Source Voltage 1500 V | ||
Series MDmesh | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 9 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 140 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 29.3 nC @ 10 V | ||
Width 5.15mm | ||
Transistor Material Si | ||
Length 15.75mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Height 20.15mm | ||
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