onsemi PowerTrench N-Channel MOSFET, 3.3 A, 100 V Enhancement, 4-Pin SOT-223 FDT86113LZ
- RS stock no.:
- 759-9715
- Mfr. Part No.:
- FDT86113LZ
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
R 162,31
(exc. VAT)
R 186,655
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 10 unit(s) shipping from 14 September 2026
- Plus 1,815 unit(s) shipping from 21 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 32.462 | R 162.31 |
| 50 - 495 | R 31.65 | R 158.25 |
| 500 - 2495 | R 30.70 | R 153.50 |
| 2500 - 4995 | R 29.472 | R 147.36 |
| 5000 + | R 28.294 | R 141.47 |
*price indicative
- RS stock no.:
- 759-9715
- Mfr. Part No.:
- FDT86113LZ
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 3.3A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-223 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 189mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.2W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.1nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 6.7mm | |
| Height | 1.7mm | |
| Length | 3.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 3.3A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-223 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 189mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.2W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.1nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 6.7mm | ||
Height 1.7mm | ||
Length 3.7mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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